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|Optimization of SiPM technology||
The SRS activity on Silicon Photomultipliers leads to the development of new SiPM technologies, aimed the the optimization of different detector parameters, such as the Dark Count Rate, the Breakdown Voltage uniformity, the Photo Detection Efficiency, the Excess Noise Factor and the Dynamic Range.
|Advanced SiPM characterization||
We develop automated programs for the advanced characterization of the Silicon Photomultipliers, for extracting precisely their most important parameters, such as Gain, Primary and Correlated noise and Photo Detection Efficiency.
|Timing Measurements with SiPMs coupled to Scintillators||
We perform timing resolution measurments with our SiPMs coupled to scintillators, aiming at the characterization and the improvement of their performance for Time-of-Flight PET (ToF PET).
SRS is actively involved in the design of different types of position-sensitive SiPMs, which allow to build ultra-high spatial resolution PET modules with a reduced complexity of the readout electronics.
SRS has been working for several years on microstrip detectors of different types, both single and double-sided, for scientific and industrial applications.
|Silicon Drift Detectors||
SRS is actively engaged in the development of Silicon Drift Detectors (SDD), a relatively recent detector built on a based on a thick, fully depleted substrate and characterized by a very low electronic noise.
|3D and Active Edge Detectors||
3D and Active Edge Detectors make use of highly anisotropic silicon etching, made possible by the Deep Reactive Ion Etching (DRIE), for implementing three-dimensional structures in fully-depleted silicon detectors.
|Custom Radiation Sensors||
We design, simulate and fabricate in house custom silicon detectors for different needs, ranging from scinentific research to industrial products.