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Fabio Acerbi was born in Carpi, Italy, in 1984.
He received the bachelor’s degree (summa cum laude) in electronics engineering from the University of Modena and Reggio Emilia, Modena, Italy, in 2006, the master’s degree (summa cum laude) from the Politecnico di Milano, Milan, Italy, in 2008, where he received the Ph.D. degree in information technology in 2012.
From 2009 to March 2013 he was with the Department of Electronics and Information (DEI) of the Politecnico di Milano, where he worked on design, development and full characterization of new InGaAs/InP single-photon avalanche diodes (SPADs) with innovative structures and improved performances and on the related fast front-end electronics.
Since April 2013 he joined Fondazione Bruno Kessler, Trento, Italy, as a Junior Researcher working on the development and characterization of Silicon Photomultimpliers (SiPM) and the readout electronics.
He has co-authored more than 20 papers in peer-reviewed international journals and conference proceedings.